Path:OKDatasheet > Dane Semiconductor > NTE Electronic Datasheet > NTE363
NTE363 spec: Silicon NPN transistor. RF power output, Po = 4W.
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NTE363 Datasheet i Spec
Producent : NTE Electronic
Opakowanie :
Pins : 4
Temperatura : Min 0 °C | Max 200 °C
Rozmiar : 25 KB
Zastosowanie : Silicon NPN transistor. RF power output, Po = 4W.
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