Path:OKDatasheet > Dane Semiconductor > NTE Electronic Datasheet > NTE5655
NTE5655 spec: TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.
Path:OKDatasheet > Dane Semiconductor > NTE Electronic Datasheet > NTE5655
NTE5655 spec: TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.
Producent : NTE Electronic
Opakowanie : TO92
Pins : 3
Temperatura : Min -40 °C | Max 100 °C
Rozmiar : 20 KB
Zastosowanie : TRIAC, 800mA, sensitive gate. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 800mA.