Path:OKDatasheet > Dane Semiconductor > NTE Electronic Datasheet > NTE570
NTE570 spec: Silicon controlled avalanche diode. Peak reverse voltage Vrm = 130V. Allowable avalanche current Izsm = 1.0A.
Path:OKDatasheet > Dane Semiconductor > NTE Electronic Datasheet > NTE570
NTE570 spec: Silicon controlled avalanche diode. Peak reverse voltage Vrm = 130V. Allowable avalanche current Izsm = 1.0A.
Producent : NTE Electronic
Opakowanie :
Pins : 2
Temperatura : Min -40 °C | Max 150 °C
Rozmiar : 15 KB
Zastosowanie : Silicon controlled avalanche diode. Peak reverse voltage Vrm = 130V. Allowable avalanche current Izsm = 1.0A.