Path:OKDatasheet > Dane Semiconductor > NTE Electronic Datasheet > NTE585
NTE585 spec: Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A.
Podobne NTE585
- NTE5198A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 24V. Zener test current Izt = 105mA."
- NTE5183A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 8.2V. Zener test current Izt = 305mA."
- NTE5945
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 15A.
- NTE5227A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 160V. Zener test current Izt = 16mA."
- NTE5914
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A.
- NTE5045A
- "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 68V, Zener test current Izt = 1.8mA."
- NTE5322W
- "Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 200V."
- NTE5001A
- "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 2.5V, Zener test current Izt = 20mA."
NTE585 Datasheet i Spec
Producent : NTE Electronic
Opakowanie :
Pins : 2
Temperatura : Min -65 °C | Max 125 °C
Rozmiar : 16 KB
Zastosowanie : Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A.
NTE585 PDF Pobierz