Path:OKDatasheet > Dane Semiconductor > NTE Electronic Datasheet > NTE629
NTE629 spec: Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 200V. Average rectifier forward current 8A (per diode), 16A (total device).
Path:OKDatasheet > Dane Semiconductor > NTE Electronic Datasheet > NTE629
NTE629 spec: Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 200V. Average rectifier forward current 8A (per diode), 16A (total device).
Producent : NTE Electronic
Opakowanie : TO220
Pins : 3
Temperatura : Min -65 °C | Max 175 °C
Rozmiar : 19 KB
Zastosowanie : Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 200V. Average rectifier forward current 8A (per diode), 16A (total device).