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BUL45D2 spec: High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
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BUL45D2 Datasheet i Spec
Producent : ON Semiconductor
Opakowanie : TO-220
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Rozmiar : 488 KB
Zastosowanie : High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
BUL45D2 PDF Pobierz