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BUK555-100B spec: PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
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BUK555-100B Datasheet i Spec
Producent : Philips
Opakowanie :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Rozmiar : 59 KB
Zastosowanie : PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
BUK555-100B PDF Pobierz