Path:OKDatasheet > Dane Semiconductor > Philips Datasheet > PHB112N06T
PHB112N06T spec: 55 V, N-channel enhancement mode field-effect transistor
Path:OKDatasheet > Dane Semiconductor > Philips Datasheet > PHB112N06T
PHB112N06T spec: 55 V, N-channel enhancement mode field-effect transistor
Producent : Philips
Opakowanie : SOT
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Rozmiar : 288 KB
Zastosowanie : 55 V, N-channel enhancement mode field-effect transistor