Podobne PHW10N60E

  • PHW10N40E
    • 400 V, power MOS transistor avalanche energy rated
  • PHW10N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHW10N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHW11N50E
    • PowerMOS transistor. Avalancne energy rated.
  • PHW11N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW11N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW13N40E
    • PowerMOS transistor. Avalanche energy rated.
  • PHW14N50E
    • PowerMOS transistor. Avalanche energy rated.

PHW10N60E Datasheet i Spec

Producent : Philips 

Opakowanie : SOT 

Pins : 3 

Temperatura : Min -55 °C | Max 150 °C

Rozmiar : 126 KB

Zastosowanie : 600 V, power MOS transistor avalanche energy rated 

PHW10N60E PDF Pobierz