F1034 spec: 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1034

F1034
- 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1034 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 34 KB

Zastosowanie : 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor