F1040 spec: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1040

F1040
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1040 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 35 KB

Zastosowanie : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor