F1116 spec: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1116

F1116
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1116 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 46 KB

Zastosowanie : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor