F1120 spec: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1120

F1120
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1120 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 48 KB

Zastosowanie : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor