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Podobne F1221

  • F1220
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1221
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1222
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1221 Datasheet i Spec

Producent : Polyfet RF 

Opakowanie :  

Pins : 2 

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 40 KB

Zastosowanie : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

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