F1240 spec: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1240

F1240
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1240 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 6

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 45 KB

Zastosowanie : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor