F1280 spec: 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1280

F1280
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1280 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 6

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 42 KB

Zastosowanie : 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor