F1430 spec: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1430

F1430
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1430 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 41 KB

Zastosowanie : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor