F1510 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1510

F1510
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1516
- 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 39 KB

Zastosowanie : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor