F1535 spec: 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F1535

F1535
- 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1535 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 39 KB

Zastosowanie : 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor