F2047 spec: 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F2047

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F2046
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F2047
- 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2048
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F2047 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 6

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 39 KB

Zastosowanie : 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor