F2201 spec: 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F2201

F2201
- 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202
- 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 38 KB

Zastosowanie : 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor