Path:OKDatasheet > Dane Semiconductor > Polyfet RF Datasheet > F2248
F2248 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Path:OKDatasheet > Dane Semiconductor > Polyfet RF Datasheet > F2248
F2248 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Producent : Polyfet RF
Opakowanie :
Pins : 6
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 38 KB
Zastosowanie : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor