F3002 spec: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Podobne F3002

F3002
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F3002 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 39 KB

Zastosowanie : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor