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L225 spec: 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
Podobne L225
- L225
- 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 Datasheet i Spec
Producent : Polyfet RF
Opakowanie : SO-8
Pins : 8
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 41 KB
Zastosowanie : 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 PDF Pobierz