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L8701P spec: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
Podobne L8701P
- L8701P
- 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8701P Datasheet i Spec
Producent : Polyfet RF
Opakowanie : SO-8
Pins : 8
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 46 KB
Zastosowanie : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8701P PDF Pobierz