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L8821P spec: 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
Podobne L8821P
- L8821P
- 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P Datasheet i Spec
Producent : Polyfet RF
Opakowanie : SO-8
Pins : 8
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 43 KB
Zastosowanie : 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P PDF Pobierz