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LB401 spec: 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
Podobne LB401
- LB401
- 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 Datasheet i Spec
Producent : Polyfet RF
Opakowanie :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 41 KB
Zastosowanie : 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 PDF Pobierz