Path:OKDatasheet > Dane Semiconductor > Polyfet RF Datasheet > LB401
LB401 spec: 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
Path:OKDatasheet > Dane Semiconductor > Polyfet RF Datasheet > LB401
LB401 spec: 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
Producent : Polyfet RF
Opakowanie :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 41 KB
Zastosowanie : 130 Watt, silicon gate enhancement mode RF power LDMOS transistor