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LC821 spec: 8 Watt, silicon gate enhancement mode RF power LDMOS transistor
Podobne LC821
- LC821
- 8 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC821 Datasheet i Spec
Producent : Polyfet RF
Opakowanie :
Pins : 6
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 40 KB
Zastosowanie : 8 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC821 PDF Pobierz