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LK802 spec: 45 Watt, silicon gate enhancement mode RF power LDMOS transistor
Podobne LK802
- LK802
- 45 Watt, silicon gate enhancement mode RF power LDMOS transistor
LK802 Datasheet i Spec
Producent : Polyfet RF
Opakowanie :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 38 KB
Zastosowanie : 45 Watt, silicon gate enhancement mode RF power LDMOS transistor
LK802 PDF Pobierz