Path:OKDatasheet > Dane Semiconductor > Polyfet RF Datasheet > LQ801
LQ801 spec: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
Podobne LQ801
- LQ801
- 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 Datasheet i Spec
Producent : Polyfet RF
Opakowanie :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 38 KB
Zastosowanie : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 PDF Pobierz