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LQ821 spec: 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
Podobne LQ821
- LQ821
- 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 Datasheet i Spec
Producent : Polyfet RF
Opakowanie :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 38 KB
Zastosowanie : 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 PDF Pobierz