P124 spec: 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

Podobne P124

P124
- 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P124 Datasheet i Spec

Producent : Polyfet RF

Opakowanie : SO-8

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 36 KB

Zastosowanie : 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor