P281 spec: 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

Podobne P281

P281
- 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 Datasheet i Spec

Producent : Polyfet RF

Opakowanie : SO-8

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 41 KB

Zastosowanie : 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor