P282 spec: 5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

Podobne P282

P282
- 5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P282 Datasheet i Spec

Producent : Polyfet RF

Opakowanie : SO-8

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 42 KB

Zastosowanie : 5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor