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SA702 spec: 50 Watt, silicon gate enhancement mode RF power VDMOS transistor
Podobne SA702
- SA702
- 50 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA702 Datasheet i Spec
Producent : Polyfet RF
Opakowanie :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 40 KB
Zastosowanie : 50 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA702 PDF Pobierz