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SA741 spec: 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
Podobne SA741
- SA741
- 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 Datasheet i Spec
Producent : Polyfet RF
Opakowanie :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 39 KB
Zastosowanie : 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 PDF Pobierz