Podobne SK703

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    • 45 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SK702
    • 90 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SK703
    • 120 Watt, silicon gate enhancement mode RF power VDMOS transistor

SK703 Datasheet i Spec

Producent : Polyfet RF 

Opakowanie :  

Pins : 4 

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 38 KB

Zastosowanie : 120 Watt, silicon gate enhancement mode RF power VDMOS transistor 

SK703 PDF Pobierz