Podobne SM705

  • SM703
    • 80 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SM704
    • 125 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SM705
    • 150 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SM706
    • 135 Watt, silicon gate enhancement mode RF power VDMOS transistor

SM705 Datasheet i Spec

Producent : Polyfet RF 

Opakowanie :  

Pins : 4 

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 39 KB

Zastosowanie : 150 Watt, silicon gate enhancement mode RF power VDMOS transistor 

SM705 PDF Pobierz