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SP203 spec: 12 Watt, silicon gate enhancement mode RF power VDMOS transistor

Podobne SP203

SP201
- "4 Watt, silicon gate enhancement mode RF power VDMOS transistor"
SP202
- 8 Watt, silicon gate enhancement mode RF power VDMOS transistor
SP203
- 12 Watt, silicon gate enhancement mode RF power VDMOS transistor
SP204
- 15 Watt, silicon gate enhancement mode RF power VDMOS transistor

SP203 Datasheet i Spec

Producent : Polyfet RF

Opakowanie :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 37 KB

Zastosowanie : 12 Watt, silicon gate enhancement mode RF power VDMOS transistor

SP203 PDF Pobierz