Podobne SQ742

  • SQ741
    • 50 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SQ741
    • 50 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SQ742
    • 90 Watt, silicon gate enhancement mode RF power VDMOS transistor

SQ742 Datasheet i Spec

Producent : Polyfet RF 

Opakowanie :  

Pins : 4 

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 40 KB

Zastosowanie : 90 Watt, silicon gate enhancement mode RF power VDMOS transistor 

SQ742 PDF Pobierz