Podobne SR706

  • SR704
    • "300 Watt, silicon gate enhancement mode RF power VDMOS transistor"
  • SR704U
    • 150 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SR705
    • 200 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SR706
    • 300 Watt, silicon gate enhancement mode RF power VDMOS transistor

SR706 Datasheet i Spec

Producent : Polyfet RF 

Opakowanie :  

Pins : 4 

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 38 KB

Zastosowanie : 300 Watt, silicon gate enhancement mode RF power VDMOS transistor 

SR706 PDF Pobierz