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SR746 spec: 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
Podobne SR746
- SR746
- 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
SR746 Datasheet i Spec
Producent : Polyfet RF
Opakowanie :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 40 KB
Zastosowanie : 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
SR746 PDF Pobierz