Path:OKDatasheet > Dane Semiconductor > ST Microelectronics Datasheet > MJD112
MJD112 spec: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Podobne MJD112
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD112 Datasheet i Spec
Producent : ST Microelectronics
Opakowanie :
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Rozmiar : 92 KB
Zastosowanie : COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJD112 PDF Pobierz