RC10S10G spec: Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 10 A.

Podobne RC10S10G

RC10S01
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
RC10S01G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
RC10S02
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
RC10S02G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
RC10S04
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
RC10S04G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
RC10S06
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.
RC10S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.

RC10S10G Datasheet i Spec

Opakowanie :

Pins : 0

Temperatura : Min -50 °C | Max 150 °C

Rozmiar : 15 KB

Zastosowanie : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 10 A.