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MJE2955T spec: PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.
Podobne MJE2955T
- MJE2955T
- PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.
MJE2955T Datasheet i Spec
Producent : Usha
Opakowanie : TO-220
Pins : 3
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 52 KB
Zastosowanie : PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.
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