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Podobne BUT11A

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    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
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    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
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    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
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BUT11A Datasheet i Spec

Producent : WingShing 

Opakowanie : TO-220 

Pins : 3 

Temperatura : Min 0 °C | Max 0 °C

Rozmiar : 24 KB

Zastosowanie : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V. 

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