Path:OKDatasheet > Dane Semiconductor > Zowie Datasheet > EGP30D
EGP30D spec: 200 V, 3A sintered glass passivated junction high efficient rectifier
Podobne EGP30D
- EGP30A
- 50 V, 3A sintered glass passivated junction high efficient rectifier
- EGP30A
- 50 V, 3A sintered glass passivated junction high efficient rectifier
- EGP30B
- 100 V, 3A sintered glass passivated junction high efficient rectifier
- EGP30B
- 100 V, 3A sintered glass passivated junction high efficient rectifier
- EGP30D
- 200 V, 3A sintered glass passivated junction high efficient rectifier
- EGP30D
- 200 V, 3A sintered glass passivated junction high efficient rectifier
- EGP30F
- 300 V, 3A sintered glass passivated junction high efficient rectifier
- EGP30F
- 300 V, 3A sintered glass passivated junction high efficient rectifier
EGP30D Datasheet i Spec
Producent : Zowie
Opakowanie :
Pins : 2
Temperatura : Min -65 °C | Max 175 °C
Rozmiar : 69 KB
Zastosowanie : 200 V, 3A sintered glass passivated junction high efficient rectifier
EGP30D PDF Pobierz