Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-35
1L PVAZ172NS JANTX2N6790 IRFI064 IRFPS3810 JANTXV2N6792 70UFR160YPD ST303S08MFN1 48L160D MBRS360TR 307UA160P2 IRF520VL ST780C06L2L ST1200C14K2L IRHM7064 SD453R16S30MTC JANTX2N6766 IRG4PH30KD SD453N12S30PTC ST730C16L3L IRHM9064 ST280S04P1V SD500OC26R ST330C12L1 CPU165MU 307UA200P3
Część nr | Producent | Zastosowanie |
---|---|---|
IRF630NL | IR | Power MOSFET, 200V, 9.3A |
ST203C12CHH1L | IR | Inverter grade thyristor |
PVAZ172NS | IR | HEXFET power mosfet photovoltaic relay |
JANTX2N6790 | IR | HEXFET power mosfet |
IRFI064 | IR | HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A |
IRFPS3810 | IR | HEXFET power MOSFET. VDSS = 100 V, RDS(on) = 0.009 Ohm, ID = 170 A |
JANTXV2N6792 | IR | HEXFET power mosfet |
70UFR160YPD | IR | Standard recovery diode |
ST303S08MFN1 | IR | Inverter grade thyristor |
48L160D | IR | Standard recovery diode |
MBRS360TR | IR | Schottky power rectifier, 60V, 3A |
307UA160P2 | IR | Standard recovery diode |
IRF520VL | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A |
ST780C06L2L | IR | Phase control thyristor |
ST1200C14K2L | IR | Phase control thyristor |
IRHM7064 | IR | HEXFET transistor |
SD453R16S30MTC | IR | Fast recovery diode |
JANTX2N6766 | IR | HEXFET power mosfet |
IRG4PH30KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A |
SD453N12S30PTC | IR | Fast recovery diode |
ST730C16L3L | IR | Phase control thyristor |
IRHM9064 | IR | HEXFET transistor |
ST280S04P1V | IR | Phase control thyristor |
SD500OC26R | IR | Standard recovery diode |
ST330C12L1 | IR | Phase control thyristor |
CPU165MU | IR | IGBT SIP module |
307UA200P3 | IR | Standard recovery diode |
SD600R20PTC | IR | Standard recovery diode |
IRGBF20F | IR | Insulated gate bipolar transistor |
SD153R08S15PSV | IR | Fast recovery diode |