Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-35

1L PVAZ172NS JANTX2N6790 IRFI064 IRFPS3810 JANTXV2N6792 70UFR160YPD ST303S08MFN1 48L160D MBRS360TR 307UA160P2 IRF520VL ST780C06L2L ST1200C14K2L IRHM7064 SD453R16S30MTC JANTX2N6766 IRG4PH30KD SD453N12S30PTC ST730C16L3L IRHM9064 ST280S04P1V SD500OC26R ST330C12L1 CPU165MU 307UA200P3

IR Prospekty Katalog-35

Część nrProducentZastosowanie
IRF630NL IRPower MOSFET, 200V, 9.3A
ST203C12CHH1L IRInverter grade thyristor
PVAZ172NS IRHEXFET power mosfet photovoltaic relay
JANTX2N6790 IRHEXFET power mosfet
IRFI064 IRHEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
IRFPS3810 IRHEXFET power MOSFET. VDSS = 100 V, RDS(on) = 0.009 Ohm, ID = 170 A
JANTXV2N6792 IRHEXFET power mosfet
70UFR160YPD IRStandard recovery diode
ST303S08MFN1 IRInverter grade thyristor
48L160D IRStandard recovery diode
MBRS360TR IRSchottky power rectifier, 60V, 3A
307UA160P2 IRStandard recovery diode
IRF520VL IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
ST780C06L2L IRPhase control thyristor
ST1200C14K2L IRPhase control thyristor
IRHM7064 IRHEXFET transistor
SD453R16S30MTC IRFast recovery diode
JANTX2N6766 IRHEXFET power mosfet
IRG4PH30KD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A
SD453N12S30PTC IRFast recovery diode
ST730C16L3L IRPhase control thyristor
IRHM9064 IRHEXFET transistor
ST280S04P1V IRPhase control thyristor
SD500OC26R IRStandard recovery diode
ST330C12L1 IRPhase control thyristor
CPU165MU IRIGBT SIP module
307UA200P3 IRStandard recovery diode
SD600R20PTC IRStandard recovery diode
IRGBF20F IRInsulated gate bipolar transistor
SD153R08S15PSV IRFast recovery diode

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