Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-36

OC16C SD1053C28S30L SD103N25S10PSC SD203N10S20MSC 72UF120AYPD IRFD220 300U120APD SD150R12MC SD103N08S10PSC 70UFR160APD IRGPF20F 47LFR20 45L60 SD233N40S50PC ST083S10PFK0L ST330S04M1 ST230S12M0V ST2100C38R1L SD300N12PSC 307UR80P4 ST103S08PFN0L SD203R14S15PSC SD453R16S30MSC IRF7459

IR Prospekty Katalog-36

Część nrProducentZastosowanie
SD203R12S15PSC IRFast recovery diode
SD110OC16C IRStandard recovery diode
SD1053C28S30L IRFast recovery diode
SD103N25S10PSC IRFast recovery diode
SD203N10S20MSC IRFast recovery diode
72UF120AYPD IRStandard recovery diode
IRFD220 IRHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.80 Ohm, ID = 0.80 A
300U120APD IRStandard recovery diode
SD150R12MC IRStandard recovery diode
SD103N08S10PSC IRFast recovery diode
70UFR160APD IRStandard recovery diode
IRGPF20F IRInsulated gate bipolar transistor
47LFR20 IRStandard recovery diode
45L60 IRStandard recovery diode
SD233N40S50PC IRFast recovery diode
ST083S10PFK0L IRInverter grade thyristor
ST330S04M1 IRPhase control thyristor
ST230S12M0V IRPhase control thyristor
ST2100C38R1L IRPhase control thyristor
SD300N12PSC IRStandard recovery diode
307UR80P4 IRStandard recovery diode
ST103S08PFN0L IRInverter grade thyristor
SD203R14S15PSC IRFast recovery diode
SD453R16S30MSC IRFast recovery diode
IRF7459 IRHEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.0 mOhm,, ID = 12A
IRG4PH30KD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A
SD103R20S10PC IRFast recovery diode
48LFR160D IRStandard recovery diode
IRFZ48VS IRPower MOSFET, 60V, 72A
ST1200C20K0 IRPhase control thyristor

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