| Część nr | Producent | Zastosowanie |
|---|
| SD253R16S15PSV | IR | Fast recovery diode |
| IRFP350 | IR | HEXFET power MOSFET. VDSS = 400 V, RDS(on) = 0.30 Ohm, ID = 16 A |
| IRF720 | IR | N-channel HEXFET, 400V, 3.3A |
| ST300C08L3L | IR | Phase control thyristor |
| SD103N10S20PC | IR | Fast recovery diode |
| SD400N08MBC | IR | Standard recovery diode |
| IRF7701 | IR | HEXFET power MOSFET. VDSS = -12V, RDS(on) = 0.011 Ohm, ID = -10A @ VGS = -4.5V. RDS(on) = 0.015 Ohm, ID = -8.5A @ VGS = -2.5V. RDS(on) = 0.022 Ohm, ID = -7.0A @ VGS = -1.8V. |
| IRGBC20U | IR | Insulated gate bipolar transistor |
| ST1230C14K2L | IR | Phase control thyristor |
| SD600R08PC | IR | Standard recovery diode |
| 300HFR120P | IR | Standard recovery diode |
| 302U40A | IR | Standard recovery diode |
| SD453R20S20MC | IR | Fast recovery diode |
| 305UA200P4 | IR | Standard recovery diode |
| SD253R12S20MSV | IR | Fast recovery diode |
| ST183C04CHK2L | IR | Inverter grade thyristor |
| 307U120P3 | IR | Standard recovery diode |
| SD203N08S15PC | IR | Fast recovery diode |
| ST180S08P1L | IR | Phase control thyristor |
| SD103R10S15MSC | IR | Fast recovery diode |
| SD103N04S15MC | IR | Fast recovery diode |
| SD203N10S20MBC | IR | Fast recovery diode |
| 301UR250P4 | IR | Standard recovery diode |
| SD203R20S10MSC | IR | Fast recovery diode |
| 305UA200 | IR | Standard recovery diode |
| ST1900C50R1 | IR | Phase control thyristor |
| IRC630 | IR | HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm |
| IRFI1010N | IR | HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A |
| IRFIZ24V | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.060 Ohm, ID = 14A |
| SD600N08PTC | IR | Standard recovery diode |
